the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. 2003 mos fet with schottky barrier diode pa507te p-channel mos fet with schottky barrier diode for switching data sheet document no. g16626ej1v1ds00 (1st edition) date published december 2003 ns cp(k) printed in japan description the pa507te is a switching dev ice, which can be driven directly by a 1.8 v power source. this device incorporates a mos fet, which features a low on-state resistance and excellent switching characteristics and a low forward voltage schottky barrier diode, and is suitable for applications such as dc/dc converter of portable machine and so on. features ? 1.8 v drive available (mos fet) ? low on-state resistance (mos fet) r ds(on)1 = 68 m ? typ. (v gs = ? 4.5 v, i d = ? 1.0 a) r ds(on)2 = 84 m ? typ. (v gs = ? 2.5 v, i d = ? 1.0 a) r ds(on)3 = 109 m ? typ. (v gs = ? 1.8 v, i d = ? 1.0 a) ? low forward voltage (schottky barrier diode) v f = 0.35 v typ. (i f = 1.0 a) ordering information part number package pa507te sc-95_5p (mini mold thin type) marking: za remark the diode connected between t he gate and source of the transistor serves as a protector against esd. when this device actually used, an addi tional protection circuit is externa lly required if a voltage exceeding the rated voltage may be applied to this device. caution this product is electrostatic-sensitive device due to low esd capability and should be handled with caution for electrostatic discharge. v esd 100 v typ. (c = 200 pf, r = 0 ? , single pulse) pin connection (top view) 123 54 1: gate 2: source 3: anode 4: cathode 5: drain package drawing (unit: mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 2.8 0.2 1.5 0.95 123 54 1.9 0.4 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 the mark shows major revised points.
data sheet g16626ej1v1ds 2 pa507te mos fet absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss ? 20 v gate to source voltage (v ds = 0 v) v gss m 8 v drain current (dc) i d(dc) m 2 a drain current (pulse) note1 i d(pulse) m 8 a total power dissipation note2 p t 0.57 w channel temperature t ch 150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board of 2500 mm 2 x 1.6 mm, t 5 sec. schottky barrier diode absolute maximum ratings (t a = 25c) repetitive peak reverse voltage v rrm 30 v average forward current note3 i f(av) 1 a surge current note4 i fsm 10 a junction temperature t j +125 c storage temperature t stg ? 55 to +125 c notes 3. mounted on fr-4 board of 2500 mm 2 x 1.6 mm, t 5 sec 4. 50 hz sine wave, 1 cycle
data sheet g16626ej1v1ds 3 pa507te mos fet electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 20 v, v gs = 0 v ? 1 a gate leakage current i gss v gs = m 8 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1.0 ma ? 0.45 ? 0.75 ? 1.50 v forward transfer admittance note | y fs | v ds = ? 10 v, i d = ? 1.0 a 2.0 4.3 s drain to source on-state resistance note r ds(on)1 v gs = ? 4.5 v, i d = ? 1.0 a 68 85 m ? r ds(on)2 v gs = ? 2.5 v, i d = ? 1.0 a 84 120 m ? r ds(on)3 v gs = ? 1.8 v, i d = ? 1.0 a 109 180 m ? input capacitance c iss v ds = ? 10 v 380 pf output capacitance c oss v gs = 0 v 85 pf reverse transfer capacitance c rss f = 1.0 mhz 45 pf turn-on delay time t d(on) v dd = ? 10 v, i d = ? 1.0 a 10 ns rise time t r v gs = ? 4.0 v 5 ns turn-off delay time t d(off) r g = 10 ? 47 ns fall time t f 28 ns total gate charge q g v dd = ? 16 v 4.7 nc gate to source charge q gs v gs = ? 4.0 v 0.9 nc gate to drain charge q gd i d = ? 2.0 a 1.5 nc body diode forward voltage note v f(s-d) i f = 2.0 a, v gs = 0 v 0.84 v note pulsed: pw 350 s, duty cycle 2% schottky barrier diode electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit forward voltage v f i f = 1.0 a 0.35 0.38 v reverse current i r v r = 10 v 200 a terminal capacitance c t f = 1.0 mhz, v r = 10 v 36 pf test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs( ? ) d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = ? 2 ma v gs wave form v ds wave form v gs( ? ) v ds( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet g16626ej1v1ds 4 pa507te mos fet typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t a - ambient temperature - c p t - total power dissipation - w 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 mounted on fr-4 board o f 2500 mm 2 x 1.6 mm t a - ambient temperature - c forward bias safe operating area i d - drain current - a - 0.01 - 0.1 - 1 - 10 - 100 - 0.1 - 1 - 10 - 100 100 ms 10 ms i d(pulse) i d(dc) pw = 1 ms r ds(on) limited (at v gs = ? 4.5 v) single pulse mounted on fr-4 board of 2500 mm 2 x 1.6 mm 5 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(ch-a) - transient thermal resistance - c/w 1 10 100 1000 single pulse mounted on fr-4 board o f 2500 mm 2 x 1.6 mm p d (fet) : p (sbd) = 1: 0 pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
data sheet g16626ej1v1ds 5 pa507te drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 - 2 - 4 - 6 - 8 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 pulsed ? 2.5 v v gs = ? 4.5 v ? 1.8 v v ds - drain to source voltage - v i d - drain current - a - 0.0001 - 0.001 - 0.01 - 0.1 - 1 - 10 0 - 0.5 - 1 - 1.5 - 2 v ds = ? 10 v pulsed t a = 125c 75c 25c ? 25c v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v - 0.4 - 0.5 - 0.6 - 0.7 - 0.8 - 0.9 - 1 - 50 0 50 100 150 v ds = ? 10 v i d = ? 1.0 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 - 0.01 - 0.1 - 1 - 10 v ds = ? 10 v pulsed t a = ? 25c 25c 75c 125c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m ? ? 1.8 v ? 2.5 v ? 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 0 50 100 150 200 0 - 2- 4- 6- 8 i d = ? 1.0 a pulsed v gs - gate to source voltage - v
data sheet g16626ej1v1ds 6 pa507te drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m ? ? 1.8 v ? 2.5 v ? 4.5 v i d = ? 1.0 a pulsed t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 - 0.01 - 0.1 - 1 - 10 - 100 v gs = 0 v f = 1.0 mhz c iss c oss c rss v ds - drain to source voltage - v switching characteristics dynamic input characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 - 0.1 - 1 - 10 v dd = ? 10 v v gs = ? 4.0 v r g = 10 ? t d(off) t d(on) t f t r i d - drain current - a v gs - gate to source voltage - v 0 - 1 - 2 - 3 - 4 012345 i d = ? 1.0 a v dd = ? 4.0 v ? 10 v ? 16 v q g - gate change - nc source to drain diode forward voltage i f - diode forward current - a 0.01 0.1 1 10 0.4 0.6 0.8 1 1.2 pulsed v gs = 0 v v f(s-d) - source to drain voltage - v
data sheet g16626ej1v1ds 7 pa507te schottky barrier diode typical characteristics (t a = 25c) forward current vs. forward voltage reverse current vs. reverse voltage i f - forward current - a 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 pulsed t a = 125c 75c 25c ? 25c v f - forward voltage - v i r - reverse current - ma 0.0001 0.001 0.01 0.1 1 10 100 0 10203040 pulsed ? 25c 25c 75c t a = 125c v r - reverse voltage - v terminal capacitance vs. reverse voltage c t - terminal capacitance - pf 10 100 1000 0.1 1 10 100 f = 1.0 mhz v r - reverse voltage - v
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